| 摘要 |
PURPOSE:To enable the projection of green laser rays by a method wherein a laser diode of a double hetrero-structure is composed of a clad layer formed of ZnSxSe1-x and an active layer formed of InxGayAlzP. CONSTITUTION:A laser diode of a double hetero-structure is composed of a clad layer formed of ZnSxSe1-x (0<=x<=1) and an active layer formed of InxGayAlzP (x+y+z=1). A first clad layer is formed of a first conductivity type crystal layer 2 of, for instance, an n-type ZnSxSe1-x grown on a substrate crystal 1 through a vapor phase growth. And, the mixed crystal ratio x is so set as to satisfy an equality, 0<=x<=1 or so. And an active layer formed of an n-type or a p-type InxGayAlzP crystal layer 3 is formed on the crystal layer 2 through a vapor phase growth. A second clad layer is formed of a second conductivity type crystal layer 4 of, for instance, p-type ZnSxSe1-x formed on the crystal layer 3 through a vapor phase growth. A periodic table Ia element such as Li or Na is introduced into the crystal layer 4 as an acceptor impurity. |
