| 摘要 |
PURPOSE:To realize the high breakdown strength of a semiconductor device, by coating the surface of an N-type epitaxial layer in an isolation region between a high potential P-type region and a low potential P-type region, with a conducting film of the same potential as the N-type epitaxial layer, via an insulating film. CONSTITUTION:A lateral PNP transistor contains the following; an N-type epitaxial layer 1 forming a base region, P<+> type regions 2, 3 forming respectively an emitter region and a collector region, and an aluminum film 5 covering the surface of the N-type epitaxial layer 1 between the regions 2, 3 and having the same potential as the epitaxial layer 1. The aluminum film 6 controls the boundary potential of the N-type epitaxial layer 1 just under the aluminum film 6, with the potential of the epitaxial layer 1 itself. Generation of parasitic channels between regions 2, 3, and restriction of extending of a depletion layer are effectively prevented, thereby realizing the high breakdown strength of a semiconductor device. |
