| 摘要 |
PURPOSE:To improve reliability, by pressing the bonding pad of a semiconductor chip at the tip of an inner lead by pressure, connecting a bump and the bonding pad by heating, and connecting at the same time the inner lead and all bonding pads. CONSTITUTION:The tip of an inner lead 4 of a lead frame RF1 for semiconductor device is formed sufficiently thinner than the thickness of material of the lead 4. A semiconductor chip(m) is moved nearer to the lead frame RF1, and bonding pad 8 is brought into contact with a bump 6. While the bump 6 of the lead 4 and the pad 8 of the chip (m) are pressed by a necessary pressure P, the boundary surface between the bump 6 and the pad 8 is heated by applying heat H at a necessary temperature, from the rear of the bonding surface of the lead 4. Eutectic bonding is formed on the boundary surface between the bump 6 and the pad 8, which are electrically connected. Thereby the reliability is increased. |
