发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To lower an energy consumption by providing a first inverter circuit whose logic threshold level is made comparatively high and a second inverter circuit whose logic threshold level is made comparatively low between an output node and the gates of first and second output MOSFETs. CONSTITUTION:Between the output terminals of a bipolar.CMOS inverter circuit BN1 and the gate of an output MOSFET Q1, second CMOS inverter circuit N1 and N2 are provided. Consequently, a time since an output signal Dout is inverted to a low level until the output MOSFET Q1 is made into a turn-off- condition, or a period since the output signal Dout is inverted to a high level until an output MOSFET Q11 is made into the turn-off-condition, namely, the period in which a through current Ip is made to flow through the output transistor of the bipolar.CMOS inverter circuit BN1 and the output MOSFET Q1 or Q11 is shortened. Thus, the peak current of a microcomputer can be reduced, and the execution of the low energy consumption is propelled.
申请公布号 JPH01185022(A) 申请公布日期 1989.07.24
申请号 JP19880008326 申请日期 1988.01.20
申请人 HITACHI LTD 发明人 INAGAKI MITSUYA
分类号 H03K17/16;H03K17/56;H03K17/567;H03K19/00;H03K19/0175;H03K19/08 主分类号 H03K17/16
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