| 摘要 |
PURPOSE:To largely reduce a range required for connection and to easily integrate a semiconductor memory by forming a conductive layer on the upper end of the inner face of a trench, and connecting the charge storage electrode of a capacitor through the conductive layer to a transistor. CONSTITUTION:A charge storage electrode 29 is connected to a transistor by a conductive layer 28 and an N<+> type diffused layer 31 formed on the upper end of the inner face of a trench 26. Accordingly, a range required for this connection becomes a range equals the thickness of the layer 28 plus the depth of the layer 31. Thus, since a cell contact is formed in the depthwise direction along the trench, the length of the contact can be largely reduced, and it can be easily integrated. |
