SOI TYPE FIELD EFFECT TRANSISTOR,申请号JP19880004510-传众专利搜索

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发明名称	SOI TYPE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH01181569(A)	申请公布日期	1989.07.19
申请号	JP19880004510	申请日期	1988.01.12
申请人	SEIKO EPSON CORP	发明人	YAZAKI MASATOSHI
分类号	H01L21/20;H01L21/336;H01L27/00;H01L27/12;H01L29/78;H01L29/786	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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