| 摘要 |
A semiconductor integrated circuit is supplied with a power source voltage (VEE) to a circuit element forming layer (23a) thereof from a conductive layer (42) through a substrate (41, 41A, 41B, 41C) and a certain region (44, 24a, 44a) made of a semiconductor type identical to that of the substrate. The conductive layer is formed on a back surface of the substrate, and the certain region makes contact with a front surface of the substrate. The circuit element forming layer is provided on the front surface side of the substrate and connects to the certain region. Alternatively, a region (90A, 90B, 90C) may be provided to extend from the circuit element forming layer to the substrate so as to provide a conductive path for supplying the power source voltage from the back surface of the substrate. |
