| 摘要 |
PURPOSE:To avoid a latch-up phenomenon by a method wherein the flow of electrons is provided from an electron emitter electrode to a semiconductor layer through a source layer and a channel region and the flow of positive holes are provided from the semiconductor layer to a positive hole emitter electrode through a body layer so as to be independent from each other. CONSTITUTION:As a positive hole emitter electrode 24 and an electron emitter electrode 22 are independently formed on a base layer 10 and a source layer 15 respectively, the flow of electrons is provided from the electron emitter electrode 22 to a semiconductor layer 11 through the source layer 15 and a channel region 16. On the other hand, the flow of the positive holes is provided from the semiconductor layer 11 to the positive hole emitter electrode 24 through a body layer 14. Therefore, the positive hole current and the electron current can be separately taken out. With this constitution, a latch-up phenomenon can be suppressed and controlled without exerting particular influence upon an ON resistance. |
