发明名称 Temperature compensated high gain FET amplifier
摘要 An amplifier includes a single-gate FET and a dual gate FET in parallel interconnection. A temperature sensing circuit supplies a temperature-dependent bias voltage to the G2 gain control gate of the dual gate FET to counteract the temperature-dependence of the amplifier FETs thereby providing gain stability in the presence of temperature variations.
申请公布号 US4849710(A) 申请公布日期 1989.07.18
申请号 US19880186956 申请日期 1988.04.27
申请人 LITTON SYSTEMS, INC. 发明人 VO, HOWARD Q.
分类号 H03F1/30;H03F1/32 主分类号 H03F1/30
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