Pattern forming method using contrast enhanced material

摘要

Disclosed is a pattern forming method using contrast enhanced material for enhancing the resolution and contrast when forming patterns in fabrication of semiconductors or the like. This pattern forming method comprises a step of applying a contrast enhanced material for pattern forming on a photoresist, a step of exposing and a step of developing. The contrast enhanced material is a water-soluble material using a novel diazo compound so that the coefficient A of the contrast may be 10 or more, and when it is combined with g-line exposure to be used in pattern formation, a pattern of 0.5 mu m or less may be formed. The diazo compound may be represented, for example, by <IMAGE>