| 摘要 |
Apparatus for sputter depositing a layer of metal onto a laterally extended substrate includes a substrate support, a deposition station, a downstream sensing assembly and a computerized controller. The deposition station includes a cathode and anodes extending the width of the substrate. Gas supply is provided to each of a plurality of zones through a common distribution chamber with a plurality of inlets which in combination cover the width of the substrate on which a thin film layer is to be deposited. The gas flow is directed through each anode into the plasma region and is individually controlled for each zone. The downstream sensing assembly includes, for each zone, a four-point contact assembly usign four electrically conductive wheels. Two of the wheels are used to apply current to the thin film and two are used to sense the resistance of it. This information is fed into the computer for use in controlling the gas flow into the deposition station, by zone.
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