| 摘要 |
PURPOSE:To obtain the title sintered body having high heat conductivity and useful for a semiconductor device, etc., by adding a fatty acid salt or alcoholate of a IIa or IIIa metal to AlN powder and sintering them. CONSTITUTION:At least one kind of org. acid salt or alkoxide of a IIa or IIIa metal, preferably yttrium stearate is added to AlN powder preferably contg. <=0.2wt.% metal impurities and having <=0.7% oxygen content and 1m<2>/g specific surface area by 0.01-20wt.% (expressed in terms of metal oxide). They are mixed, molded as usual and sintered at 1,500-2,200 deg.C in a nonoxidizing atmosphere. The resulting sintered body has >=100w/mk heat conductivity and is suitable for use as an IC board, a heat radiating plate, a structural substrate, etc. |
