| 摘要 |
PURPOSE:To enable a photosensitive body to be used in both polarities by forming a photoconductive layer made of intrinsic amorphous silicon containing a specified amount of boron. CONSTITUTION:The photosensitive body of the title is formed by successively laminating on a substrate 1 a charge injection blocking layer 2 made of amorphous silicon nitride, the photoconductive layer 3 made of intrinsic amorphous silicon containing 0.05-5.0ppm boron, and a surface layer 4 made of amorphous silicon nitride. If the layer 3 contains boron more than said upper limit, potential acceptance of the surface of the photosensitive body is lowered, and electrons in the layer 3 are made immobile, deteriorating sensitivity at the time of negative charging, and if it contains less than the lower limit, positive holes are made immobile, deteriorating sensitivity at the time of positive charging, accordingly, it is necessary to control said boron content in said range. |
