| 摘要 |
PURPOSE:To enhance the uniformity of a plated thickness of bump electrodes by a method wherein microscopic bump electrodes are arranged and formed also in a dividing region of a prescribed width used to divide each device region between individual device regions into chips and, after that, the microscopic bump electrodes are removed by a side etching operation. CONSTITUTION:A signal input part 12 (12a, 12b,...) is formed in each device region A on a silicon wafer 11; an insulating film 13 having openings in the signal input part 12 is formed on it. A Ti film 141 and then a Cu film 142 are evaporated and formed on the whole face of this wafer; they are used as a substratum metal film 14. A resist pattern 15 to be used as a mask for selective plating use is formed on the substratum metal film 14. The resist pattern 15 contains a microscopic opening 17 (17a, 17b,...) used to erect microscopic bump electrodes inside a dividing region B in addition to an opening 16 (16a, 16b,...) used to form bump electrodes inside the region A. Then, a Cu layer 18 (18a, 18b,...) is formed by a selective plating operation; in succession, an In layer 19 (19a, 19b,...) is formed. By this setup, it is possible to obtain the uniformity of the height of the bump electrodes by the selective plating operation. |
