发明名称 SEMICONDUCTOR NON-VOLATILE MEMORY
摘要 <p>PURPOSE:To obtain a non-volatile memory with high integration and a high added value by setting a ratio of a RAM to a ROM at 1: plural number, or plural number: 1, or plural number: plural number corresponding to the application purpose of a user. CONSTITUTION:In the non-volatile memory (NVRAM) having the ratio of one bit of the ROM to several bits of the RAM, only information desired to store out of the information in the RAM can be inputted to the ROM, thereby, it is possible to realize the compression (cost down) or integration of chip size compared with an on-going memory. Also, in case of desiring to process several kinds of information by a pair of RAMs at need, it is practicable to use the NVRAM having the ratio of one bit of the RAM to several bits of the ROM. In figure, the NVRAM provided with an SRAM having (n) blocks (nXN bits) to one EEPROM of N bits, and the NVRAM in which (n) EEPROMs of N bits are provided for one SRAM of N bits are shown as examples.</p>
申请公布号 JPH01179295(A) 申请公布日期 1989.07.17
申请号 JP19870332507 申请日期 1987.12.29
申请人 SEIKO INSTR & ELECTRON LTD 发明人 KATO YUICHI
分类号 G11C14/00;G11C11/40;G11C16/02;G11C17/00 主分类号 G11C14/00
代理机构 代理人
主权项
地址