| 摘要 |
PURPOSE:To prevent a throughput from being lowered and to form a pattern with high accuracy by a method wherein an auxiliary transfer apparatus is installed separately from a main transfer apparatus, a line width of a circuit pattern of a reticle is measured by using a laser step alignment system (LSA) ststem and a main control system feedback-controls a coater-developer and a stepper properly under an optimum formation condition on the basis of this measured value and a design value. CONSTITUTION:An auxiliary transfer apparatus St is installed separately from a main transfer apparatus Mt; a wafer (W) is transferred to a stepper 20. At this stage, an LSAC 31 scans and shifts a resist pattern RP in the Y direction by using a spot beam SP. Photoelectric signals S1, S2 calculate a line width Ly of the resist pattern RP on the basis of Y coordinate values of positions y<1>, y2 which form individual peaks. Then, a main control system 50 operates optimum formation conditions such as a developing condition, a thickness condition of a resist film and the like on the basis of the line width Ly measured with the LSAC 31 and on the basis of a designed line width which has been input in advance. The main control system 50 feedback-controls a coater-developer (C), (D) and the stepper 20 properly so that the wafer can be treated under the optimum condition in accordance with this operated value. |
