发明名称 |
Monolithically integrated insulated gate semiconductor device |
摘要 |
A monolithically integrated semiconductor device preferably comprising a thyristor driven transistor is disclosed. The thyristor provides a base drive sufficient to fully turn-on an inherent bipolar transistor and achieve the maximum benefit of bipolar conduction within the semiconductor device. The thyristor can be turned on and off through insulated gate control by decoupling the emitter region of the thyristor from the cathode electrode of the device.
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申请公布号 |
US4847671(A) |
申请公布日期 |
1989.07.11 |
申请号 |
US19870051424 |
申请日期 |
1987.05.19 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
PATTANAYAK, DEVA N.;BALIGA, BANTVAL J. |
分类号 |
H01L27/07;H01L29/73;H01L29/745 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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