| 摘要 |
A method for producing a semiconductor device includes producing a first mask film on a main surface of a compound semiconductor wafer, patterning the first mask film and producing a second mask film so as to cover at least an end portion of the first mask film, diffusing impurities into the compound semiconductor wafer under gaseous pressure of atoms, which atoms occur in the compound of the semiconductor wafer, thereby to produce a first conductivity type first diffusion region, thermally diffusing impurities into the wafer under gaseous pressure of atoms, which atoms occur in the compound of the semiconductor wafer, thereby to produce a second conductivity type region. Accordingly, the end of the first mask film can be recognized accurately and used as a reference line for pattern alignment in photolithograph. Thus, diffusions of p type and n type impurities can be conducted at a high positional precision, and an outstanding performance semiconductor device can be obtained.
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