发明名称 CHEMICAL VAPOUR DEPOSITION METHOD TO PRODUCE AN ELECTRONIC DEVICE HAVING A MULTI-LAYER STRUCTURE
摘要 <p>A method for producing an electronic device having a multi-layer structure comprising one or more semiconductor thin layers controlled in valence electron formed on a substrate comprises forming at least one of said semiconductor thin layers controlled in valence electron according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a precursor in an excited state and transferring at least one precursor of those precursors into a film forming space communicated with the reaction space as a feeding source for the constituent element of the deposited film.</p>
申请公布号 CA1257403(A) 申请公布日期 1989.07.11
申请号 CA19860526328 申请日期 1986.12.24
申请人 CANON KABUSHIKI KAISHA 发明人 OHTOSHI, HIROKAZU;HIROOKA, MASAAKI;HANNA, JUN-ICHI;SHIMIZU, ISAMU
分类号 H01L31/04;C23C16/44;C23C16/452;C23C16/48;C23C16/54;G03G5/08;G03G5/082;H01L21/205;H01L21/263;H01L21/336;H01L29/78;H01L29/786;H01L31/075;H01L31/20;(IPC1-7):H01L31/18;H01L31/08 主分类号 H01L31/04
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