| 摘要 |
PURPOSE:To reduce a wiring resistance without bringing a reduction in productivity, which is caused by forming the whole of the title sensor into a thick film, and to improve an S/N in a small size by a method wherein the sensor is split into a sensor substrate, which is formed by a thin film technique, and a driving circuit board, which is formed by a thick film technique. CONSTITUTION:Photoelectric conversion elements 3 and individual electrodes 5, which are arranged unidirectionally, and a common electrode 8 are formed on a first high-resistance substrate 1 by such a thin film technique as a sputtering method and a deposition method. With a driving circuit 4 provided on a second high-resistance substrate 2, power electrodes 7 for supplying a power supply to this circuit 4, a control electrode 9 for supplying a control signal to this circuit 4 and a common electrode 10 for reading out a signal from the electrode 8 are respectively formed of a thick film and the circuit 4 and each electrode and the common electrodes 8 and 10 are connected to each other by bondings 6. Accordingly, a wiring resistance becomes smaller than that in the case of thin film electrodes and effects due to a potential difference and current variation, that is, noise and an S/N are respectively reduced and can be improved.
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