| 摘要 |
PURPOSE:To obtain a resist pattern forming method which is effectual even to a plating liquid of low current efficiency by specifying the acid value of an alkaline development type dry film photoresist and specifying respectively the pH of an aq. acid soln. to be used after development or the temp. of washing water. CONSTITUTION:The alkaline development type dry film photoresist compsn. having 55-95 acid value is used and after said compsn. is laminated on a substrate, the compsn. is developed with a dilute aq. alkaline soln. The photoresist is then washed by using the aq. acid soln. of pH0.5-1.5 or water kept at 45-60 deg.C. More specifically, the alkaline development type dry film having 55-95 acid value is laminated on a copper lined laminate which is a substrate and is subjected to adequate exposing; thereafter, the photoresist is developed for the time of 1.5-2 times the min. development time at 25-35 deg.C by using an aq. soln. of 0.5-2.0wt.% sodium carbonate. The photoresist is thereafter washed with the aq. acid soln. of pH0.5-1.5 or water kept at 45-60 deg.C. Hydrochloric acid, sulfuric acid, oxalic acid, etc., are used as the acid. |
