| 摘要 |
PURPOSE:To deposite an aluminum metal thin film having sufficient thickness on the side wall of window and thereby obtain disconnection-free upper wiring by making larger the size of opening at the upper side of window than the size of opening at the lower side thereof in case of providing a contact window on a thick insulating film provided on the semiconductor substrate. CONSTITUTION:A thick field oxide film is provided in the periphery of surface of P type Si substrate 1, the N type source/drain region 2 is formed within the substrate area 1 surrounded by such oxide film, and a gate electrode is provided through a gate insulating film. Then, a lower wiring 3 is provided on the field oxide film, a PSG film 4 which will become inter-layer insulating film is deposited on the entire part, a polycrystalline Si film 7 is deposited and a photo sensible resin film 8 having an opening 50 is provided thereon. Thereafter, an exposed part of film 7 is formed using the opening 50 and a contact window 5 corresponding to the wiring 3 and drain region 2 is formed by the reactive ion etching on the film 4 located under such exposed portion. At this time, the diameter is large at the upper part of window but is small at the lower part. Thereby, disconnection is not generated at the wiring 3 and the Al wiring 6 which is in contact with the region 2. |
