| 摘要 |
PURPOSE:To obtain a super-large-scale integrated circuit operable at high speed, by scanning an electronic or laser beam on a composite metal oxide film formed on an insulating film, so as to describe a pattern corresponding to a desired interconnection pattern, heat treating the same and coupling the interconnection pattern with an integrated circuit within a contact hole in the insulating film. CONSTITUTION:A semiconductor integrated circuit 1 of silicon or a silicon compound is formed on a semiconductor wafer by using a fine working technique or the like. An insulating film 2 of SiO2 or the like is formed thereon and provided with a contact hole 3. A composite metal oxide film 4 for example of Y1Ba2Cu3O7-delta doped with strontium is formed thereon by means of vapor phase growth using an organic metal with a temperature of the semiconductor substrate held at 700 deg.C or less. An electronic or laser beam is scanned to describe a desired interconnection pattern 5 under electronic control so that the scanned region is made superconductive. For a material that can be made superconductive efficiently, the laser beam scanning may be conducted in the atmosphere of O2. Such construction can be utilized for example for a DRAM of GaAs with 64 KSRAM or over so that an operating time tDC less than 10nsec can be realized for the circuit as a whole. Thus, it is possible to obtain a super-large-scale integrated circuit operable at high speed. |
