PLASMA ETCHING APPARATUS

摘要

A reactive ion plasma etching apparatus having an electrode (12), for holding the product, such as a semiconductor wafer (33, 53), to be etched, provided with a plurality of apertures (15, 15a, 15b) into which different tailored product holders are inserted so as to alter the plasma over each holder and provide more uniform etching of the product in the holder regardless of its position on the electrode (12). The holders, like holders (30) and (51), have preferably a recess or a mesa for supporting the wafers.