| 摘要 |
In order to enhance the sensitivity to blue and thus the efficiency of pin or nip solar cells made of amorphous, hydrogenised silicon on transparent substrates (1), the dopant carry-over due to the previously deposited p or n layer (3) is compensated for, during the deposition of the i layer (4) in the glow discharge plasma by a dopant of the opposite conductivity type. In the case of pin solar cells, the boron profile inevitably occurring in the i layer (4) is compensated for by a parallel phosphorus doping profile. <IMAGE>
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