发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To execute high-speed reading and writing actions by providing a circuit to control a current source by means of an address signal and a reading signal. CONSTITUTION:A current source circuit for a reading current ID and a current source circuit for a writing current IW are connected to digit lines D0-Dn, and a circuit 90 to control the IW by a WE input signal and a data input signal DIN and a control circuit 91 to control the IW by the WE input signal and an address input signal AY are connected to the current source circuit for the IW. The reading signal and address signal are inputted to the circuit 91 to control the writing current IW in making it into a second reading current, and the gate delaying time of the control circuit 91 is adjusted so that the second reading current can be made to flow for a time until the digit lines discharge a parasitic capacity and a DC level is attained. Thus, the high-speed reading action can be executed without slowing down writing speed.</p>
申请公布号 JPH01171192(A) 申请公布日期 1989.07.06
申请号 JP19870332961 申请日期 1987.12.25
申请人 NEC CORP 发明人 ARIMURA MASAHIKO
分类号 G11C11/414;G11C11/34;G11C11/41 主分类号 G11C11/414
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