| 摘要 |
PURPOSE:To obtain an X-ray mask whose section corresponds with the sectional form of a T-type control electrode, by forming a second absorber to absorb X-ray on a first absorber, etching anisotropically the second absorber, and exposing partially the main surface of a substrate in the inside of an aperture. CONSTITUTION:An X-ray absorber 2 is formed on the main surface of an X-ray transmitting film substrate 1 composed of silicon nitride or boron nitride. The whole surface of the absorber 2 is coated with electron beam resist 3, and, by patterning, an aperture is made whose width corresponds with the width of a T-type control electrode. After the substrate 1 is exposed by using the resist 3 as a mask, and anisotropically etching the exposed absorber 2, the resist 3 is eliminated. An X-ray absorber 4 is formed on the whole surface of the absorber 2 containing the exposed substrate 1 surface. When the absorber 4 is eliminated by anisotropic etching, a part of the main surface of the substrate 1 is exposed. Thereby, an X-ray mask is obtained whose section corresponds with the sectional form of the T-type control electrode. |
