发明名称 |
Semiconductor device with semimetal. |
摘要 |
<p>Disclosed is a semiconductor device with semimetal having a high switching speed and high current gain in the microwave region. To reduce the energy difference between the conduction band edge of a base layer and the valance band edge of an emitter layer or a collector layer, and to reduce the base resistance, a semimetal base transistor is provided.</p> |
申请公布号 |
EP0322773(A2) |
申请公布日期 |
1989.07.05 |
申请号 |
EP19880121535 |
申请日期 |
1988.12.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
AWANO, YUJI HIGHCITY OMOTESANDO 312 |
分类号 |
H01L29/68;H01L29/15;H01L29/201;H01L29/205;H01L29/76;H01L29/80 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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