| 摘要 |
PURPOSE:To contrive the improvement of the electrical characteristics and the manufacturing yield of a thin film transistor and to make its fine formation possible by a method wherein an electrode, which is provided on an insulative substrate, is buried in the recessed part of the insulative substrate. CONSTITUTION:An electrode 13, which is provided on an insulative substrate 11, is buried and formed in a recessed part 22 provided in the substrate 11. Accordingly, a gate insulating film 13, a semiconductor film 14 and other electrodes 16 and 17 can be formed flatly and the disconnection of drain and source electrodes and so on is prevented. Moreover, even though the thickness of the electrode 12 becomes thick considerably, the source and drain electrodes and so on can be flattened. Therefore, even though the width of the electrode 12 is made narrow, a wiring resistance can be made small by making the thickness of the electrode large. Thereby, the improvement of the electrical characteristics and the manufacturing yield of a thin film transistor is contrived add at the same time, its fine formation becomes possible. |
