发明名称 |
Dynamic random access memories having shared sensing amplifiers. |
摘要 |
<p>In a folded line DRAM having shared sensing amplifiers (13) for two memory cell arrays (1 and 2), one of the memory cell arrays (1) is provided with a switch (5, 6) which divides bit line pairs (BL, BL) into a plurality of bit line pair groups during accessing of the other memory cell array (2).</p> |
申请公布号 |
EP0323172(A2) |
申请公布日期 |
1989.07.05 |
申请号 |
EP19880312253 |
申请日期 |
1988.12.22 |
申请人 |
SONY CORPORATION |
发明人 |
MIYABAYASHI, MASAYUKI PATENTS DIVISION SONY CORP.;TAKESHITA, KANEYOSHI PATENTS DIVISION SONY CORP. |
分类号 |
G11C7/18;G11C11/401;G11C11/4097 |
主分类号 |
G11C7/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|