FORMING METHOD FOR ELEMENT ISOLATION REGION IN SEMICONDUCTOR INTEGRATED CIRCUIT,申请号JP19870326761-传众专利搜索

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发明名称	FORMING METHOD FOR ELEMENT ISOLATION REGION IN SEMICONDUCTOR INTEGRATED CIRCUIT
摘要
申请公布号	JPH01169941(A)	申请公布日期	1989.07.05
申请号	JP19870326761	申请日期	1987.12.25
申请人	CITIZEN WATCH CO LTD	发明人	SHIMAZU KATSUHIRO;TOIDA TAKASHI
分类号	H01L21/76;H01L21/316	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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