INTEGRATED CIRCUIT FABRICATION PROCESS FOR FORMING A BIPOLAR TRANSISTOR HAVING EXTRINSIC BASE REGIONS,申请号EP19860308296-传众专利搜索

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发明名称	INTEGRATED CIRCUIT FABRICATION PROCESS FOR FORMING A BIPOLAR TRANSISTOR HAVING EXTRINSIC BASE REGIONS
摘要
申请公布号	EP0221742(A3)	申请公布日期	1989.07.05
申请号	EP19860308296	申请日期	1986.10.24
申请人	ADVANCED MICRO DEVICES, INC.	发明人	CHANG, SHIAO-HOO;WEINBERG, MATTHEW;THOMAS, MAMMEN
分类号	H01L21/8222;H01L21/265;H01L21/331;H01L21/762;H01L27/06;H01L29/10;H01L29/73;(IPC1-7):H01L21/76	主分类号	H01L21/8222
代理机构		代理人
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