| 摘要 |
PURPOSE:To form a non-doped amorphous silicon layer thinly by forming layer constitution having an amorphous silicon layer having multilayer structure between a metallic electrode and a transparent electrode on a substrate. CONSTITUTION:A metallic electrode 2, a non-doped a-Si layer 3, a second a-Si layer 4, a first a-Si layer 5 and a transparent electrode 6 are laminated successively on a transparent glass substrate 1. Cr, Al, Ni, Cr, etc., are shaped as the electrode 2 by an evaporation method. The Si layer 3 is of a thin-film of 8000-10000Angstrom . The Si layer 4 is composed of an a-Si film containing oxygen, hydrogen, carbon and phosphorus, and has resistivity of 10<3>-10<15>OMEGAcm and photo conductivity in a region whose optical gap extends over 2.0eV or more. The Si layer 5 consists of an a-Si film including oxygen, hydrogen, carbon and boron, and has resistivity of 10<3>-10<15>OMEGAcm and photo conductivity in the region whose optical gap extends over 2.0eV or more. Accordingly, the film thickness of the non-doped amorphous silicon layer, the Si layer 3, is shaped thinly. |
