| 摘要 |
<p>A semiconductor laser device containing a laser oscillation-operating area which comprises a Ga1-xAlxAs (0</=x</=1) quantum well active layer (16), Ga1-yAlyAs optical guiding layers (15,17) interposing the quantum well active layer therebetween, and Ga1-zAlzAs cladding layers (14,18) superposed on the optical guiding layers, respectively, wherein the AlAs mole fraction y at the area of each of the optical guiding layers (15, 17) positioned in the vicinity of the interface of the optical guiding layers and the quantum well active layer (16) meets the relationships y-x >/= 0.3 and z-y </= 0.25.</p> |
