| 摘要 |
PURPOSE:To bring the overall regions of wafers into even contact with each other by a method wherein a wafer with no pressure applied at lower temperature than that of another wafer is laminated with the latter. CONSTITUTION:An Si wafer 1 is steam-oxidized to form an SiO2 film on the surface of the Si wafer 1. The Si wafer 1 is mounted on a carbon heater 3 to be heated. Another wafer 4 at the temperature of 50 deg.C or more lower than that of the wafer 1 being heated is mounted on the wafer 1. At this time, no pressure is applied to the wafer 4. One side of the laminated wafer 4 is heated to covexly deform the contact surface and then the deformation is restored by the temperature difference in inside and outside of the wafer 4 diminished in proportion to the advancement of the heat conduction to bring the wafer 4 into even contact with the wafer 1. |
