| 摘要 |
A method for low temperature chemical vapor deposition of an SiO2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO2 based films with oxides of phosphorus and boron.
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