| 摘要 |
A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The barrier layer exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.
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