| 摘要 |
<p>PURPOSE:To reduce a point defect and uneven black of a picture element by constituting a holding capacity element for using the other scanning signal line of two pieces of scanning signal lines as a capacity electrode line and using it as the other electrode. CONSTITUTION:A thin film transistor TFT of a picture element selected by one scanning signal line of two pieces of scanning signal lines GL is divided into plural ones, and to each of these divided thin film transistors TFT1-3, each of those which are formed by dividing picture element electrodes ITO1-3 into plural ones is connected. Subsequently, on each of these divided picture element electrodes ITO1-3, a holding capacity element for setting this picture element electrode as one electrode, using the other scanning signal line of two pieces of scanning signal lines GL as a capacity electrode line and using it as the other electrode is constituted. Accordingly, a part which is divided of the picture element goes to only a point defect and it comes not to be a point defect as the whole of the picture element. In such a way, the point defect of the picture element is reduced, and also, a voltage holding characteristic applied to a liquid crystal by the holding capacity element can be improved, therefore, uneven black can be reduced.</p> |
