发明名称 |
Transistor structure |
摘要 |
The invention relates to a field-effect transistor (1;20) with insulated gate electrode (9;30) which comprises in a semiconductor body (5) a drain diffusion zone (2) connected to a drain electrode (6;32) and a source diffusion zone (3) which is disposed spaced from the drain diffusion zone (2) for forming a channel zone (4) and which is connected to a source electrode (7). The gate electrode (9;32) of said field-effect transistor is disposed on a gate insulating layer (8) over the channel zone (4). For protecting the transistor against high voltages produced by electrostatic charging the drain diffusion zone (2) of the transistor and/or the source diffusion zone (3) between the respective associated electrode (6,7;32) and the channel zone (4) is divided into a plurality of parallel strips (10,11). Integrated circuits are also protected against destruction by high voltages if the insulated gate field-effect transistors connected to their output terminals are constructed in the manner outlined above.
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申请公布号 |
US4845536(A) |
申请公布日期 |
1989.07.04 |
申请号 |
US19870088512 |
申请日期 |
1987.08.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HEINECKE, GUENTER;SOOBIK, LEMBIT |
分类号 |
H01L27/088;H01L21/8234;H01L29/08;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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