Semiconductor integrated circuit device

摘要

An IC device comprising a junction type field effect transistor of a back gate type and a bipolar device such as a bipolar transistor and a resistor made of impurity diffused region, wherein an extremely thin (in the order of 0.05-0.2 mu m) impurity doped surface region of a conductivity type same as that of a back gate region is formed at the surface of a surface channel region, and is separated from at least a drain region to sustain high breakdown voltage between gate region and the drain region; the impurity surface region serving to reduce noise and also enabling to achieve satisfactory characteristics of J-FET and also good ohmic characteristics of the resistor.