| 摘要 |
<p>PURPOSE:To lower the resistance of a bus line without complicating the production process and to decrease the film breakage by underlying steps by subjecting an image reversal photoresist to a negative type processing and positive type processing. CONSTITUTION:A conductive film 2 such as Ti film and a conductive film 3 such as Al film and an image reversal photoresist film 4 by a coating method are laminated on a substrate 1. A region 5 except an intersected region (C) of a gate electrode forming region (B) and a drain bus line in the gate bus line forming region (A) is then exposed and is baked. The other regions except the region A are then exposed and are subjected to the development processing to form the resist film 6. The exposed parts of the films 3, 2 are further removed by the similar processing. The film 6 is in succession exposed and developed and the resist film 6' covering the region A except the regions B, C is formed; thereafter, the exposed part of the film 3 and the film 6' are successively removed and the gate bus line of the laminated structure is formed.</p> |
