| 摘要 |
PURPOSE:To reduce power loss consumed by a semiconductor device and to provide an overvoltage protecting function to be operated even at an overvoltage having a wide pulse width by connecting a resistor between the drain and the gate, and between the source and the gate of an enhancement field effect transistor (E-type MOSFET) to be formed on the same substrate. CONSTITUTION:A semiconductor device 20 is composed of resistors 10, 11, an E-type MOSFET 16, an equivalent capacity 21 of the E-type MOSFET 16. Accordingly, if the values of the resistors 10, 11 are so set that, when an overvoltage is applied between a source terminal 14 and a drain terminal 13, the voltage divided by the resistor 10 between a gate wiring 15 and the terminal 14 exceeds a threshold voltage, the terminal 14 and the terminal 13 are conducted only when the overvoltage is applied between the terminals 14 and 13, thereby protecting a switching element 56 connected in parallel through the terminals 14 and 13 to the device 20 against the overvoltage. |
