发明名称 PLASMA VAPOR GROWTH APPARATUS
摘要 PURPOSE:To prevent a deposit from exfoliating from a substrate and grow a film with fewer defects, by disposing a heater on a deposition-proof plate which covers the inner walls of a vacuum-processing bath. CONSTITUTION:The processing bath is evacuated by means of a pump 3, and a reaction gas 4 is introduced as at 5 and blown on a substrate 7 retained by a holder 6. A high-frequency voltage is applied, via an inlet 6a, between the holder 6 and an electrode 8 opposing thereto to produce a glow discharge, thereby to form a film on the substrate 7. At this time, the substrate 7 is heated to 250- 300 deg.C as at 9 to make the formed film firmly adhere to the substrate 7. If a deposition-proof plate 10 covering the inner walls of the processing bath is simultaneously heated to 250-300 deg.C as at 11, similarly the film firmly adheres to the substrate 7. Accordingly, there is no possibility that the film may exfoliate to contaminate the inside of the processing bath, so that defects on the substrate 7 decrease remarkably.
申请公布号 JPS58209110(A) 申请公布日期 1983.12.06
申请号 JP19820091247 申请日期 1982.05.31
申请人 HITACHI SEISAKUSHO KK 发明人 NAKAMURA MASANOBU;KOMATANI MASATOSHI;KUMADA SEIJI;EZAWA MASAYOSHI;MISUMI AKIRA
分类号 H01L31/0248;C23C16/509;H01L21/205 主分类号 H01L31/0248
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