| 摘要 |
PURPOSE:To eliminate the uneven part of the surface of a semiconductor device, to provide a flat source electrode surface, and to improve the reliability of a wire bonding by forming a groove on the surface of a semiconductor substrate, providing a gate on the groove, and so disposing the substrate and the gate that the surface of the substrate and the surface of the gate are substantially on the same plane. CONSTITUTION:The semiconductor device is formed by forming a plurality of p-type regions 3 on the surface of an n<-> type semiconductor layer 2 and then forming by etching a groove 11 between the regions 3. The etching is conducted by conventional photolithography technique, such as chemical, plasma or sputter etching, etc. The depth l of the groove to be formed is the value obtained by adding the thicknesses of a gate insulating film 6, a gate electrode 7 and an interlayer insulating film. Accordingly, the surface 3a of the p-type region and the surface 9a of the interlayer insulating film of the surface of the gate have substantially the same height, and the surfaces of both are disposed substantially on the same plane. |
