| 摘要 |
<p>PURPOSE:To make it possible to perform series operation and to increase an oscillating output without problems such as dispersion and man-hours, by providing epitaxial growth layers, wherein operating layers and low resistance layers having the higher impurity concentrations than that of the operating layers are alternately grown. CONSTITUTION:An N<+> buffer layer 2 and an operating layer 3 are formed on a substrate 1. An N<+> intermediate layer (impurity concentration is about 1X10<18>cm<-3> and higher than that of the operating layer 3 and thickness is about 3mum) 10 is formed on the upper surface of the operating layer. An operating layer 11 is formed thereon. An N<+> contact layer (impurity concentration is about 1X10<18>cm<-3> and thickness is about 3mum) 4 is formed on the upper surface of the operating layer 11. An Ohmic electrode 5 is formed thereon. An ohmic electrode 6 is further formed on the rear surface.</p> |
