| 摘要 |
PURPOSE:To obtain highly sensitive and high speed semiconductor integrated device by keeping a gate length of paired transistors included in the amplifier within the specified length and configurating a gate electrode into approx. U-shape. CONSTITUTION:The U-shaped gate electrodes 41, 42 on a P or N type substrate and the inside of U-shaped part is formed as the drain electrodes 43, 44, while the external common part as the source electrode 45. Thereby, since respective transistors has current components in both directions at the parallel part of U-shaped area, currents are cancelled each other and a pair of transistors having excellent symmetry can be formed, symmetry of electrical characteristic of differential amplifier circuit can be acquired with improvement in sensitivity and operation rate. |
