| 摘要 |
<p>PURPOSE:To prevent the undesired rewriting of data by individually setting an operating mode to fetch the data into a data input latch and an operating mode to rewrite a non-volatile memory cell with the data which are fetched into a data input latch. CONSTITUTION:The operating mode, which can fetch the data into a data input latch DILAT, and the operating mode, which can rewrite a memory cell array MCA by the data to be fetched into the data input latch DILAT, are individually set. Namely, the operating mode, which fetches the data to be supplied from an external part into the data input latch DILAT, is set by the change of a write-enable signal WE to a low level basically. Accordingly, the operating mode, which rewrites the memory cell array MCA by the data to be held by the data input latch DILAT, is enabled only when a write signal WR is caused to be a high level. Thus, the undesired rewriting of the data due to a guiding noise can be prevented.</p> |
