发明名称 METHOD OF CLEAVING SEMICONDUCTOR LASER
摘要 <p>PURPOSE:To make it possible to obtain a good cleavage plane which is lineally cleaved, by forming a notch spaced by a length of a resonator of a semiconductor laser element on a scribe line in a direction vertical to a cleavage direction. CONSTITUTION:Each element 2 of a semiconductor laser is formed along a crystalline structure of a semiconductor wafer 1 and a notch 3 is formed at intervals of L of a resonator length of the element 2 on a scribe line l for cutting in a direction vertical to the cleavage plane of the element 2. Then, the wafer 1 having a notch 3 is fixed along the notch 3 in a direction forming the cleavage plane on end surfaces of vertical fixing tools 5 and 6. Then, a forced is applied to the wafer 1 downwardly and bar-shaped wafer 8 having a lineally cleaved plane 2a is formed using the notch 3 as a guide of the cleavage direction.</p>
申请公布号 JPH01166593(A) 申请公布日期 1989.06.30
申请号 JP19870326453 申请日期 1987.12.22
申请人 NEC KANSAI LTD 发明人 TANAKA KATSUMICHI
分类号 H01L21/301;H01S5/00;H01S5/02 主分类号 H01L21/301
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