| 摘要 |
A method for treating a silicon plate, a so-called wafer, in a cold-wall reactor when using the so-called CVD-technique in order, among other things, to deposit substances on the silicon plate by introducing different gases into the reactor. The reactor is configured as a microwave cavity, and one treatment stage involves introducing microwave energy into the reactor from a microwave generator, thereby to heat the silicon plate to a desired temperature, which is measured in a known manner. According to one preferred embodiment, a suitable etching gas is introduced into the cold-wall reactor, and microwave energy is then introduced into the reactor at a power level such as to form a plasma in the reactor, to thereby back-etch a substrate or to clean the reactor from possible impurities contained therein. |
