| 摘要 |
PURPOSE:To alleviate a crystal lattice distortion and to obtain a high carrier concentration by forming a delta-doped monoatomic layer containing doped atoms on the boundary of a hetero junction. CONSTITUTION:An undoped GaAs layer 102, a delta-doped monoatomic layer 103 having Si as doping atom, and an undoped AlxGa1-xAs layer 104 are sequentially grown by epitaxially growing on a semi-insulating GaAs substrate 101. Then, after a gate electrode 106 is formed, with it as a mask source, drain electrodes 105 are formed by ion implanting, and an ohmic electrode 107 is formed. Since the layer 103 is disposed in a hetero boundary of the layers 102 and 104, even if the concentration of the Si atoms of an impurity is high, a lattice distortion is alleviated in the boundary, and since the layer 103 is formed on the hetero boundary, mutual action between the Si atoms is small, thereby obtaining a high carrier concentration. |
